Мақаланы E-mail арқылы жіберу Surface emitting quantum-cascade lasers with a second-order grating and increased coupling coefficient
- Авторлар: Babichev A.V.1, Pikhtin N.A.2, Novikov I.I.1, Karachinsky L.Y.1, Evtikhiev V.P.1,2, Lyutetskii A.V.2, Slipchenko S.O.2, Mitrofanov M.I.2,3, Voznyuk G.V.1,2, Panevin V.Y.4, Petruk A.D.4, Kharin N.Y.4, Gladyshev A.G.1, Kolodeznyi E.S.1, Egorov A.Y.5
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Мекемелер:
- ITMO University
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences
- Шығарылым: Том 87, № 6 (2023)
- Беттер: 855-860
- Бөлім: Articles
- URL: https://edgccjournal.org/0367-6765/article/view/654385
- DOI: https://doi.org/10.31857/S036767652370148X
- EDN: https://elibrary.ru/VMALWG
- ID: 654385
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The results of studying the characteristics of surface-emitting quantum-cascade ring lasers with a second-order grating are presented. The selection of etching receipt by ion beam lithography made it possible to increase the coupling coefficient to 12 cm–1. Lasing close to 7.6 μm with a low threshold current density (about 0.3 kA/cm2) is demonstrated.
Авторлар туралы
A. Babichev
ITMO University
Хат алмасуға жауапты Автор.
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg
N. Pikhtin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg
I. Novikov
ITMO University
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg
L. Karachinsky
ITMO University
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg
V. Evtikhiev
ITMO University; Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg; Russia, 194021, Saint Petersburg
A. Lyutetskii
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg
S. Slipchenko
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg
M. Mitrofanov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences; Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg; Russia, 194021, Saint Petersburg
G. Voznyuk
ITMO University; Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg; Russia, 194021, Saint Petersburg
V. Panevin
Peter the Great St. Petersburg Polytechnic University
Email: a.babichev@itmo.ru
Russia, 195251, Saint Petersburg
A. Petruk
Peter the Great St. Petersburg Polytechnic University
Email: a.babichev@itmo.ru
Russia, 195251, Saint Petersburg
N. Kharin
Peter the Great St. Petersburg Polytechnic University
Email: a.babichev@itmo.ru
Russia, 195251, Saint Petersburg
A. Gladyshev
ITMO University
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg
E. Kolodeznyi
ITMO University
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg
A. Egorov
Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg
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