Optimization of the random number generator based on InGaAs pi-n photodiode in a homodyne scheme using discrete wavelet analysis

M. E. Sibgatullin; Сибгатуллин М. Э.; L. R. Gilyazov; Гилязов Л. Р.; D. A. Mavkov; Мавков Д. А.; N. M. Arslanov; Арсланов Н. М.

doi:10.31857/S036767652370309X

Optimization of the random number generator based on InGaAs pi-n photodiode in a homodyne scheme using discrete wavelet analysis

Авторлар: Sibgatullin M.E.¹^,2^,3, Gilyazov L.R.¹, Mavkov D.A.¹, Arslanov N.M.¹
Мекемелер:
1. Kazan National Research Technical University
2. Academy of Sciences of the Republic of Tatarstan
3. Kazan (Volga Region) Federal University
Шығарылым: Том 87, № 12 (2023)
Беттер: 1796-1801
Бөлім: Articles
URL: https://edgccjournal.org/0367-6765/article/view/654542
DOI: https://doi.org/10.31857/S036767652370309X
EDN: https://elibrary.ru/QJPWDP
ID: 654542

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Аннотация
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Әдебиет тізімі
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Статистика

Аннотация

An approach is proposed to optimize the operation of a random number generator based on discrete wavelet analysis. It is shown that controlling the contribution of the scale components of the wavelet transform to the signal can increase the degree of randomness of the generated series of numbers.

Негізгі сөздер

random number generator, discrete wavelet analysis, Hurst exponent, entropy

Авторлар туралы

M. Sibgatullin

Kazan National Research Technical University; Academy of Sciences of the Republic of Tatarstan; Kazan (Volga Region) Federal University

Хат алмасуға жауапты Автор.
Email: sibmans@mail.ru
Russia, 420111, Kazan; Russia, 420111, Kazan; Russia, 420008, Kazan

L. Gilyazov

Kazan National Research Technical University

Email: sibmans@mail.ru
Russia, 420111, Kazan

D. Mavkov

Kazan National Research Technical University

Email: sibmans@mail.ru
Russia, 420111, Kazan

N. Arslanov

Kazan National Research Technical University

Email: sibmans@mail.ru
Russia, 420111, Kazan

Әдебиет тізімі

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