Electronic paramagnetic resonance of Gd3+ ions in a Pb1-x-yGdxCuyS narrow-gap semiconductor: effects of resonance transitions on conductivity
- Autores: Ulanov V.А.1,2,3, Zaynullin R.R.2, Yatsyk I.V.1, Shestakov A.V.4, Sinitsin A.М.2
-
Afiliações:
- Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”
- Kazan State Power Engineering University
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- Edição: Volume 88, Nº 12 (2024)
- Páginas: 1919-1925
- Seção: Nanooptics, photonics and coherent spectroscopy
- URL: https://edgccjournal.org/0367-6765/article/view/682291
- DOI: https://doi.org/10.31857/S0367676524120129
- EDN: https://elibrary.ru/EWESUL
- ID: 682291
Citar
Resumo
In a crystals of the narrow-band semiconductor Pb1-x-yGdxCuyS (x = 1.1·10–3, y = 2.5·10–3) at temperatures T = 5—300 K, unusual dependences of the shape of the lines of the EPR spectra of paramagnetic centers Gd3+ on the temperature and microwave power level in the resonator of EPR-spectrometer were discovered by the electron paramagnetic resonance method. Based on the results of the analysis of the shape parameters of the resonance lines recorded in the X-range, it was concluded that one of the reasons for the unusual changes in the observed EPR spectra of Gd3+ centers is the uneven distribution of the acceptor impurity of copper with the formation of regions with different concentrations of free charge carriers. Apparently, in these regions, resonant transitions between the spin states of Gd3+ centers have different effects on the values of the kinetic characteristics of free charge carriers, which lead to different contributions to the quasi-resonant absorption of microwave power.
Texto integral

Sobre autores
V. Ulanov
Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”; Kazan State Power Engineering University;
Email: rrza7@yandex.ru
Zavoisky Physical-Technical Institute
Rússia, Kazan; KazanR. Zaynullin
Kazan State Power Engineering University
Autor responsável pela correspondência
Email: rrza7@yandex.ru
Rússia, Kazan
I. Yatsyk
Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”
Email: rrza7@yandex.ru
Zavoisky Physical-Technical Institute
Rússia, KazanA. Shestakov
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: rrza7@yandex.ru
Rússia, Moscow
A. Sinitsin
Kazan State Power Engineering University
Email: rrza7@yandex.ru
Rússia, Kazan
Bibliografia
- Равич Ю.И., Ефимова Б.А., Смирнов И.А. Методы исследования полупроводников в применении к халькогенидам свинца PbTe, PbSe и Pb S.М.: Наука, 1968. 384 c.
- Dyakonov M.I. // In: Springer Series in Solid-State Sciences. V. 157. Springer International Publishing AG, 2017.
- Kossut J., Gaj J.A. Introduction to the physics of diluted magnetic semiconductors. Berlin, Heidelberg: Springer-Verlag, 2010. 469 p.
- Teran F.J., Potemski M., Maude D.K. et al. // Physica E. 2003. V. 17. P. 335.
- Уланов В.А., Зайнуллин Р.Р., Хушея Т.А.Н., Яцык И.В. // Изв. РАН. Сер. физ. 2021. Т. 85. № 12. C. 1682, Ulanov V.A., Zainullin R.R., Housheya T.A.N., Yatsyk I.V. // Bull. Russ. Acad. Sci. 2021. V. 85. No. 12. P. 1337.
- Алексеева Г.Т., Ведерников М.В., Гуриева Е.А. и др. // ФТП. 1998. Т. 32. № 7. C. 806, Alekseeva G.T., Vedernikov M.V., Gurieva E.A. // Semiconductors. 1998. V. 32. No. 7. P. 716.
- Заячук Д.М., Добрянский О.А. // ФТП. 1998. Т. 32. № 11. С. 1331, Zayachuk D.M., Dobryanskiǐ O.A. // Semiconductors. 1998. V. 32. No. 11. P. 1185.
- Голенищев-Кутузов В.А., Синицин А.М., Лабутина Ю.В., Уланов В.А. // Изв. РАН. Сер. физ. 2018. Т. 82. № 7. С. 852, Golenishchev-Kutuzov V.A., Sinitsin A.M., Labutina Yu.V., Ulanov V.A. // Bull. Russ. Acad. Sci. Phys. 2018. V. 82. No. 7. P. 761.
- Уланов В.А., Зайнуллин Р.Р., Синицин А.М. и др. // Изв. РАН. Сер. физ. 2023. Т. 87. № 12. С. 1773, Ulanov V.A., Zainullin R.R., Sinizin A.M. et al. // Bull. Russ. Acad. Sci. 2023. V. 87. No. 12. P. 1856.
- Абрагам А., Блини Б. Электронный парамагнитный резонанс переходных ионов. Т. 1. М.: Мир, 1972. 652 с.
- Story T. // Phys. Rev. Lett. 1996. V. 77. No. 13. P. 2802.
- Vladimirova M., Cronenberger S., Barate P. et al. // Phys. Rev. B. 2008. V. 78. Art. No. 081305(R).
Arquivos suplementares
