On a shape of band-to-acceptor luminescence line in semiconductors

I. A. Kokurin; Кокурин И. А.; N. S. Averkiev; Аверкиев Н. С.

doi:10.31857/S0367676523701478

On a shape of band-to-acceptor luminescence line in semiconductors

作者: Kokurin I.A.¹^,2, Averkiev N.S.¹
隶属关系:
1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
2. National Research Ogarev Mordovia State University
期: 卷 87, 编号 6 (2023)
页面: 849-854
栏目: Articles
URL: https://edgccjournal.org/0367-6765/article/view/654384
DOI: https://doi.org/10.31857/S0367676523701478
EDN: https://elibrary.ru/VLVYLH
ID: 654384

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详细
作者简介
参考
补充文件
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详细

A theoretical explanation is proposed for the shape of the long-wavelength edge of the luminescence line, which is caused by the recombination of a free electron and a hole of a neutral acceptor. The formation of complexes, in which a single hole is localized by the field of two attracting ions (\(A_{2}^{ - }\) complexes) and the subsequent recombination of holes in such complexes with electrons of the conduction band are considered. The Coulomb repulsion in the final state after recombination and the dispersion of the complexes in terms of the interionic distance provide an extended long-wavelength tail of the luminescence line, comparable in magnitude to the ionization energy of a single acceptor.

作者简介

I. Kokurin

Ioffe Physical-Technical Institute of the Russian Academy of Sciences; National Research Ogarev Mordovia State University

编辑信件的主要联系方式.
Email: ivan.a.kokurin@gmail.com
Russia, 194021, St. Petersburg,; Russia, 430005, Saransk

N. Averkiev

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: ivan.a.kokurin@gmail.com
Russia, 194021, St. Petersburg,

参考

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