Email this article On the influence of oxygen bombardment on the structure formation of hafnium oxide films
- Authors: Luzanov V.A.1
-
Affiliations:
- Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
- Issue: Vol 69, No 11 (2024)
- Pages: 1076-1078
- Section: Articles
- URL: https://edgccjournal.org/0033-8494/article/view/684285
- DOI: https://doi.org/10.31857/S0033849424110058
- EDN: https://elibrary.ru/HOGBLL
- ID: 684285
Cite item
Open Access
Access granted
Subscription Access
Abstract
Hafnium oxide films were deposited by magnetron reactive sputtering under oxygen bombardment conditions. Structural analysis showed that the presence of oxygen bombardment during film growth leads to changes in the short-range order in the crystal structure of the films obtained.
Keywords
About the authors
V. A. Luzanov
Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
Author for correspondence.
Email: valery@luzanov.ru
Russian Federation, Vvedenskii Squar., 1, Fryazino, Moscow Region, 141190
References
- Böscke T., Müller J., Bräuhaus D. et al. // Int. Electron Devices Meeting. 2011. P. 24.5.1.
- Grüger H., Kunath C., Kurth E. et al. // Thin Solid Films. 2004. № 447. P. 509.
- Cavalieri M., O’Connor É., Gastaldi C. et al. // ACS Appl. Electron. Mater. 2020. V. 2. № 6. P. 1752.
- He J. Q., Teren A., Jia C. L. et al. // J. Сrystal Growth. 2004. № 262. P. 295.
- Tongpenga S., Makbuna K., Peanporma P. et al. // Materials Today: Proceedings. 2019. V. 17. Pt. 4. P. 1555.
- Belo G. S., Nakagomi F., Minko A. et al. // Appl. Surf. Sci. 2012. № 261. P. 727.
- Лузанов В. А., Алексеев С. Г., Ползикова Н. И. // РЭ. 2018. Т. 63. № 9. P. 1015.
Supplementary files
