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Photoresistance of a film heterostructure Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3/MgO
- Authors: Chibirev A.O.1, Leontyev A.V.1, Salikhov T.M.1, Mamin R.F.1
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Affiliations:
- Zavoisky Physical-Technical Institute – Subdivision of the Federal Research Center “Kazan Scientific Center of Russian Academy of Sciences”
- Issue: Vol 87, No 4 (2023)
- Pages: 534-537
- Section: Articles
- URL: https://edgccjournal.org/0367-6765/article/view/654430
- DOI: https://doi.org/10.31857/S0367676522700946
- EDN: https://elibrary.ru/NOUHGG
- ID: 654430
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Abstract
An effect of illumination by ultrashort laser pulsed light at 514 nm on electrical resistance of Ba0.8Sr0.2TiO3/LaMnO3 heterostructure has been observed. In the temperature range below 175 K, illumination causes a reversible increase in the resistance. A time constant linked to the rate of resistance changes is about 30–50 s.
About the authors
A. O. Chibirev
Zavoisky Physical-Technical Institute – Subdivision of the Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences”
Author for correspondence.
Email: chibirev12@mail.ru
Russia, 420029, Kazan
A. V. Leontyev
Zavoisky Physical-Technical Institute – Subdivision of the Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences”
Author for correspondence.
Email: chibirev12@mail.ru
Russia, 420029, Kazan
T. M. Salikhov
Zavoisky Physical-Technical Institute – Subdivision of the Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences”
Email: chibirev12@mail.ru
Russia, 420029, Kazan
R. F. Mamin
Zavoisky Physical-Technical Institute – Subdivision of the Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences”
Email: chibirev12@mail.ru
Russia, 420029, Kazan
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