Study of deposition modes of Cu2O films by RF magnetron sputtering for application in solar cell structures

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Abstract

The deposition of Cu2O films was carried out by radio-frequency (RF) magnetron sputtering in an oxygen-free environment at room temperature. The effect of the power and pressure in the chamber on the deposition rate, structural and optical properties of Cu2O films was studied. It was shown that the dependence of the Cu2O film deposition rate on the sputtering power is almost linear and increases slightly with increasing argon pressure in the chamber. It was found that all Cu2O films have a predominantly nanocrystalline structure consisting of columnar grains, the average size of which increases from 10 to 30 nm with an increase in the sputtering power from 25 to 100 W and in the chamber pressure from 3·10–3 to 7·10–3 mbar. At the same time, the Cu2O films have a relatively smooth surface with an average roughness in the range from 4.5 to 5.9 nm. It has been established that the optimal sputtering power for deposition of Cu2O films with the largest grain size and low surface roughness is 75 W and chamber pressure of 5·10–3 mbar. It has been shown that under this magnetron sputtering mode, the Cu2O film has two main diffraction peaks, which correspond to the orientations of the crystal planes (111) and (200) for the cubic Cu2O phase, as well as high optical absorption of up to about 600 nm and a band gap of 2.18 eV. The models of solar cells based on the ZnO/Cu2O heterojunction were manufactured by magnetron sputtering at room temperature and their current-voltage characteristics were studied. The obtained results can be used in the development of structures and technological processes for the formation of solar cells on glass and flexible substrates using the magnetron sputtering method.

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About the authors

A. V. Saenko

Southern Federal University

Author for correspondence.
Email: avsaenko@sfedu.ru
Russian Federation, Taganrog, 347928

V. V. Zheits

Southern Federal University

Email: avsaenko@sfedu.ru
Russian Federation, Taganrog, 347928

Z. E. Vakulov

Southern Federal University

Email: avsaenko@sfedu.ru
Russian Federation, Taganrog, 347928

V. A. Smirnov

Southern Federal University

Email: avsaenko@sfedu.ru
Russian Federation, Taganrog, 347928

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Supplementary files

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2. Fig. 1. Dependences of the deposition rate of Cu2O films on the power and pressure in the chamber during RF magnetron sputtering

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3. Fig. 2. SEM images of the surface morphology of Cu2O films at magnetron sputtering power from 25 to 100 W (pressure 5 10–3 mbar)

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4. Fig. 3. SEM images of the surface morphology of Cu2O films at a chamber pressure of 3 10–3 to 7 10–3 mbar (power 75 W) and a transverse cleavage with a thickness of 92 nm

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5. Fig. 4. AFM image of the Cu2O film surface (power 75 W, pressure 5 10–3 mbar) and the dependence of surface roughness on the sputtering power

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6. Fig. 5. X-ray diffraction pattern of Cu2O film (power 75 W, pressure 5 10–3 mbar)

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7. Fig. 6. Survey XPS spectrum and high-resolution spectra of copper and oxygen levels of Cu2O film (power 75 W, pressure 5 10–3 mbar)

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8. Fig. 7. Transmission spectrum and determination of the band gap of the Cu2O film (power 75 W, pressure 5 10–3 mbar)

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9. Fig. 8. Schematic structure, experimental models and volt-ampere characteristics of solar cells based on ZnO/Cu2O heterojunction

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