Influence of boundary conditions on transport in a quantum well

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The problem of the electrical conductivity of a conducting channel at the boundary of a heterojunction or in a MD transistor is solved, considering the quantum theory of transfer processes. The thickness of the layer can be comparable to and less than the de Broglie wavelength of the charge carriers. The behavior of charge carriers is described by the quantum Liouville equation. The influence of surface scattering of charge carriers is considered through the Soffer boundary conditions. An expression for the electrical conductivity is obtained and its dependence on the strength of the transverse electric field and the roughness parameter of the boundary of the conducting channel with another semiconductor is analyzed. A comparative analysis of theoretical calculations with experimental data is carried out.

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Sobre autores

D. Romanov

P. G. Demidov Yaroslavl State University

Autor responsável pela correspondência
Email: romanov.yar357@mail.ru
Rússia, Yaroslavl

I. Kuznetsova

P. G. Demidov Yaroslavl State University

Email: romanov.yar357@mail.ru
Rússia, Yaroslavl

Bibliografia

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2. Fig. 1. HEMT structure. S – source, G – gate, D – drain, Nitride – silicon nitride (Si3N4 , CC – conducting channel – two-dimensional electron gas located in the GaN layer at the heterojunction boundary

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3. Fig. 2. Conducting channel in GaN

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4. Fig. 3. Potential well for charge carriers in the layer

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5. Fig. 4. Dependence of Σ on the dimensionless stress EG0 at xλ = 10, g1 = 1. Curves 1, 2, 3 were obtained at g2 = 0, g2 = 0.3, g2 = 1, respectively.

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6. Fig. 5. Dependence of Σ on the roughness parameter g2 at xλ = 10, g1 = 1. Curves 1, 2, 3 were obtained at EG0 = 0.05, EG0 = 0.1, EG0 = 0.15 respectively.

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7. Fig. 6. Dependence of the drain current density of the heterostructure on the voltage between the source and drain. The dots indicate the experimental data [17], and the solid curve indicates the theoretical calculation.

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