| Issue |
Title |
File |
| Vol 52, No 3 (2023) |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
|
|
Serov D.A., Khorin I.A.
|
| Vol 53, No 6 (2024) |
Simulation of Memristive Crossbar Array Electrical Behavior in Neuromorphic Electronic Blocks |
|
|
Dudkin A.P., Ryndin E.A., Andreeva N.V.
|
| Vol 53, No 3 (2024) |
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate |
|
|
Masalsky N.V.
|
| Vol 52, No 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
|
|
Masalskii N.V.
|
| Vol 52, No 1 (2023) |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
|
|
Asadov M.M., Mustafaeva S.N., Guseinova S.S., Lukichev V.F.
|
| Vol 52, No 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
|
|
Asadov M.M., Mammadova S.O., Huseynova S.S., Mustafaeva S.N., Lukichev V.F.
|
| Vol 52, No 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
|
|
Makhviladze T.M., Sarychev M.E.
|
| Vol 52, No 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
|
|
Pozdnyakov D.V., Borzdov A.V., Borzdov V.M.
|
| Vol 52, No 4 (2023) |
Single Event Displacement Effects in a VLSI |
|
|
Chumakov A.I.
|
| Vol 54, No 3 (2025) |
Stabilization of memristor cell states during initial switching process after forming |
|
|
Fadeev A.V., Rudenko K.V.
|
| Vol 53, No 2 (2024) |
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters |
|
|
Lomov A.A., Seredin B.M., Martyushov S.Y., Tatarintsev A.A., Popov V.P., Malibashev A.V.
|
| Vol 54, No 3 (2025) |
Structure of thin titanium nitride films deposited by magnetron sputtering |
|
|
Isaev A.G., Rogozhin A.E.
|
| Vol 53, No 1 (2024) |
Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses |
|
|
Nefedov D.V., Shabunin N.O., Bratashov D.N.
|
| Vol 54, No 1 (2025) |
Study of deposition modes of Cu2O films by RF magnetron sputtering for application in solar cell structures |
|
|
Saenko A.V., Zheits V.V., Vakulov Z.E., Smirnov V.A.
|
| Vol 52, No 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
|
|
Kerimov E.A.
|
| Vol 53, No 4 (2024) |
Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO |
|
|
Saenko A.V., Bilyk G.E., Smirnov V.A.
|
| Vol 52, No 4 (2023) |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
|
|
Glushko A.A., Morozov S.A., Chistyakov M.G.
|
| Vol 52, No 4 (2023) |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
|
|
Evstafieva M.V., Knyazev M.A., Korepanov V.I., Red’kin A.N., Roschupkin D.V., Yakimov E.E.
|
| Vol 52, No 3 (2023) |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
|
|
Klimov E.A., Pushkarev S.S., Klochkov A.N., Mozhaeva M.O.
|
| Vol 54, No 3 (2025) |
Temperature characteristics of a simple current mirror on silicon high-voltage nLDMOS with a large DRIFT area |
|
|
Novoselov A.S., Gusev M.R., Masal’skii N.V.
|
| Vol 53, No 5 (2024) |
Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor |
|
|
Novoselov А.S., Gusev М.R., Masalsky N.V.
|
| Vol 53, No 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
|
|
Khamzin E.K., Uslin D.A.
|
| Vol 53, No 3 (2024) |
The Effect оf Laser Radiation оn Functional Properties of MOS Structures |
|
|
Rekhviashvili S.S., Gaev D.S.
|
| Vol 52, No 5 (2023) |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
|
|
Efremov A.M., Smirnov S.A., Betelin V.B.
|
| Vol 53, No 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
|
|
Chumakov A.I.
|
| Vol 53, No 3 (2024) |
The structure and formation of non-volatile memory cells of Superflash |
|
|
Abdullaev D.A., Bobrova E.V., Milovanov R.A.
|
| Vol 53, No 3 (2024) |
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs |
|
|
Kagadey V.A., Kodorova I.Y., Polyntsev E.S.
|
| Vol 52, No 4 (2023) |
Tomography of Detectors Taking Dead Time into Account |
|
|
Bogdanov Y.I., Katamadze K.G., Borshchevskaya N.A., Avosopiants G.V., Bogdanova N.A., Kulik S.P., Lukichev V.F.
|
| Vol 54, No 4 (2025) |
Training of a Spiking Neural Network with a Consideration of Memristive Crossbar Array Characteristics |
|
|
Dudkin A.P., Ryndin E.A., Andreeva N.V.
|
| Vol 53, No 6 (2024) |
Tunnel Breakdown Bipolar Transistor |
|
|
Rekhviashvili S.S., Gaev D.S.
|
| Vol 52, No 6 (2023) |
ВНИМАНИЮ АВТОРОВ |
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|
|
| Vol 52, No 1 (2023) |
Искусственный интеллект никогда не заменит полностью человека |
|
|
Абрамов И.
|
| Vol 52, No 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
|
|
Яфаров Р., Шабунин Н.
|
| Vol 52, No 1 (2023) |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
|
|
Ефремов А., Kwon K.
|
| Vol 52, No 1 (2023) |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
|
|
Локотко В., Васильевский И., Каргин Н.
|
| Vol 52, No 1 (2023) |
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана |
|
|
Мурин Д., Пивоваренок С., Чесноков И., Гогулев И.
|
| 101 - 136 of 136 Items |
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