| Edição |
Título |
Arquivo |
| Volume 53, Nº 6 (2024) |
III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application |
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Gusev A., Sultanov A., Ryzhuk R., Nevolina T., Tsunvaza D., Safaraliev G., Kargin N.
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| Volume 53, Nº 3 (2024) |
Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier |
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Gusev A., Sultanov A., Katkov A., Ryndya S., Siglovaya N., Klochkov A., Ryzhuk R., Kargin N., Borisenko D.
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| Volume 53, Nº 1 (2024) |
Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping |
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Golikov O., Kodochigov N., Obolensky S., Puzanov A., Tarasova E., Khazanova S.
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| Volume 54, Nº 4 (2025) |
Hardware implementation of an asynchronous analog neural network with training based on unified cmos ip blocks |
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Petrov M., Ryndin E., Andreeva N.
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| Volume 53, Nº 4 (2024) |
Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement |
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Makarenko P., Zolnikov V., Zarevich A., Zalenskaya N., Poluektov A.
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| Volume 53, Nº 6 (2024) |
Tunnel Breakdown Bipolar Transistor |
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Rekhviashvili S., Gaev D.
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| Volume 52, Nº 6 (2023) |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
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Altudov Y., Gaev D., Pskhu A., Rekhviashvili S.
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| Volume 52, Nº 3 (2023) |
Fast Electrochemical Micropump for Portable Drug Delivery Module |
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Uvarov I., Shlepakov P., Abramychev A., Svetovoy V.
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| Volume 54, Nº 4 (2025) |
Effect of rapid thermal annealing on the formation of aluminum-silicon and aluminum-polysilicon ohmic contacts in integrated microcircuits |
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Zhyhulin D., Pilipenko V., Shestovski D.
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| Volume 52, Nº 4 (2023) |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
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Kuznetsova I., Savenko O., Romanov D.
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| Volume 52, Nº 5 (2023) |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
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Novoselov A., Masalskii N.
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| Volume 53, Nº 6 (2024) |
Influence of Manufacture Imperfections and Electrical Noise on Evolution of a Charge Qubit under Optical Control |
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Tsukanov A., Kateev I.
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| Volume 53, Nº 3 (2024) |
Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma |
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Murin D., Grazhdyan A., Chesnokov I., Gogulev I.
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| Volume 53, Nº 3 (2024) |
The Effect оf Laser Radiation оn Functional Properties of MOS Structures |
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Rekhviashvili S., Gaev D.
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| Volume 52, Nº 5 (2023) |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
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Mordvintsev V., Kudryavtsev S., Naumov V., Gorlachev E.
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| Volume 52, Nº 4 (2023) |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
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Saenko A., Vakulov Z., Klimin V., Bilyk G., Malyukov S.
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| Volume 53, Nº 2 (2024) |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
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Kenzhaev Z., Zikrillaev N., Odzhaev V., Ismailov K., Prosolovich V., Zikrillaev K., Koveshnikov S.
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| Volume 52, Nº 4 (2023) |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
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Koval’chuk N., Lastovskii S., Odzhaev V., Petlitskii A., Prosolovich V., Shestovsky D., Yavid V., Yankovskii Y.
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| Volume 54, Nº 2 (2025) |
Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors |
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Masalsky N.
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| Volume 52, Nº 6 (2023) |
ВНИМАНИЮ АВТОРОВ |
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| Volume 53, Nº 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
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Khamzin E., Uslin D.
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| Volume 54, Nº 2 (2025) |
Regularities of X-ray transfer in doped multicomponent semiconductors for dosimetry |
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Asadov S., Mustafaeva S., Lukichev V.
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| Volume 52, Nº 5 (2023) |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |
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Prokaznikov A., Paporkov V., Chirikov V., Evseeva N.
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| Volume 52, Nº 3 (2023) |
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots |
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Tsukanov A., Kateev I.
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| Volume 52, Nº 5 (2023) |
Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |
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Zuev S., Lopatin A., Luchin V., Salashchenko N., Tsybin N., Chkhalo N.
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| Volume 52, Nº 6 (2023) |
PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |
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Murin D., Chesnokov I., Gogulev I., Grishkov A.
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| Volume 54, Nº 2 (2025) |
Measuring adhesion energy between MEMS structures using an adhered cantilever |
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Uvarov I., Morozov O., Postnikov A., Svetovoy V.
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| Volume 52, Nº 2 (2023) |
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |
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Novikov Y., Filippov M.
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| Volume 52, Nº 1 (2023) |
Искусственный интеллект никогда не заменит полностью человека |
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Абрамов И.
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| Volume 52, Nº 2 (2023) |
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |
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Tsukanov A., Kateev I.
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| Volume 53, Nº 1 (2024) |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
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Polyakova V., Saenko A., Kots I., Kovalev A.
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| Volume 54, Nº 1 (2025) |
Investigation of double patterning method with the usage of antispacer |
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Tikhonova E., Gornev E.
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| Volume 52, Nº 2 (2023) |
Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |
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Kerimov E.
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| Volume 53, Nº 6 (2024) |
Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate |
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Kerimov E.
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| Volume 54, Nº 1 (2025) |
Study of deposition modes of Cu2O films by RF magnetron sputtering for application in solar cell structures |
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Saenko A., Zheits V., Vakulov Z., Smirnov V.
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| Volume 52, Nº 4 (2023) |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
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Evstafieva M., Knyazev M., Korepanov V., Red’kin A., Roschupkin D., Yakimov E.
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| Volume 53, Nº 5 (2024) |
Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes |
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Efanov D., Yelina E.
|
| Volume 52, Nº 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
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Kerimov E.
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| Volume 53, Nº 4 (2024) |
Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO |
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Saenko A., Bilyk G., Smirnov V.
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| Volume 52, Nº 4 (2023) |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
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Glushko A., Morozov S., Chistyakov M.
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| Volume 53, Nº 5 (2024) |
Electron cyclotron resonance plasma studies using the second cyclotron harmonic resonance |
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Kovalchuk А., Shapoval S.
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| Volume 53, Nº 4 (2024) |
CNOT Quantum Gate Based on Spatial Photonic Qubits Under Resonant Electro-Optical Control |
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Tsukanov A., Kateev I.
|
| Volume 54, Nº 1 (2025) |
Influence of boundary conditions on transport in a quantum well |
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Romanov D., Kuznetsova I.
|
| Volume 54, Nº 1 (2025) |
Exposure kinetics of a positive photoresist layer on an optically matched substrate |
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Kudrya V.
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| Volume 53, Nº 3 (2024) |
Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions |
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Makhviladze T., Sarychev M.
|
| Volume 53, Nº 3 (2024) |
A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering |
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Kurbatov S., Rudy A., Naumov V., Mironenko A., Savenko O., Smirnova M., Mazaletsky L., Pukhov D.
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| Volume 52, Nº 5 (2023) |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
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Sirotkin V.
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| Volume 52, Nº 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
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Яфаров Р., Шабунин Н.
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| Volume 52, Nº 1 (2023) |
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |
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Murin D., Chesnokov I., Pivovarenok S., Efremov A.
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| Volume 52, Nº 4 (2023) |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |
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Efremov A., Bobylev A., Kwon K.
|
| Volume 53, Nº 6 (2024) |
A Brief Overview of the Typology of Neurons and Analysis of Using Memristor Crossbars |
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Tokarev A., Khorin I.
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| Volume 53, Nº 5 (2024) |
Mathematical modeling of a microprocessor liquid cooling system |
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Andreev А., Semenov A.
|
| Volume 53, Nº 1 (2024) |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
|
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Rogozhin A., Glaz O.
|
| Volume 54, Nº 3 (2025) |
Method for automated calculation of grains and voids in metal films and TSV-structures |
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|
Dyuzhev N., Gusev E., Ivanin P., Zolnikov V., Fomichev M.
|
| Volume 53, Nº 4 (2024) |
Methodology of Production of Photo-Sensitive Elements on Ptsi Basis |
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|
Kerimov E.
|
| Volume 52, Nº 4 (2023) |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
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Fadeev A., Myakon’kikh A., Smirnova E., Simakin S., Rudenko K.
|
| Volume 53, Nº 5 (2024) |
Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier |
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Krasnikov G., Bokarev V., Teplov G., Yafarov R.
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| Volume 53, Nº 4 (2024) |
Al Islands on Si(111): Growth Temperature, Morphology and Strain |
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Lomov A., Zakharov D., Tarasov M., Chekushkin A., Tatarintsev A., Vasiliev A.
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| Volume 54, Nº 4 (2025) |
MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI |
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Shengurov V., Titova A., Alyabina N., Chalkov V., Denisov S., Zdoroveyshchev A.
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| Volume 52, Nº 4 (2023) |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
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Tulina N., Rossolenko A., Borisenko I., Ivanov A.
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| Volume 54, Nº 2 (2025) |
Multilevel switchings in memristive structures based on oxidized lead selenide |
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Tulina N., Rossolenko A., Shmytko I., Borisenko I., Borisenko D., Kolesnikov N.
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| Volume 52, Nº 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
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Asadov M., Mammadova S., Huseynova S., Mustafaeva S., Lukichev V.
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| Volume 52, Nº 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
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Pozdnyakov D., Borzdov A., Borzdov V.
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| Volume 52, Nº 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
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Makhviladze T., Sarychev M.
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| Volume 52, Nº 1 (2023) |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
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Asadov M., Mustafaeva S., Guseinova S., Lukichev V.
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| Volume 53, Nº 2 (2024) |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
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Asadov S.
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| Volume 53, Nº 3 (2024) |
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate |
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Masalsky N.
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| Volume 52, Nº 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
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Masalskii N.
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| Volume 53, Nº 6 (2024) |
Simulation of Memristive Crossbar Array Electrical Behavior in Neuromorphic Electronic Blocks |
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Dudkin A., Ryndin E., Andreeva N.
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| Volume 54, Nº 4 (2025) |
Modeling of Self-Assembly of Microinductors Produced Due to Residual Mechanical Stress |
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Babushkin A., Selyukov R.
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| Volume 52, Nº 3 (2023) |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
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Serov D., Khorin I.
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| Volume 53, Nº 6 (2024) |
Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors |
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Asadov S., Mustafaeva S., Mammadov A., Lukichev V.
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| Volume 53, Nº 1 (2024) |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
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Asadov M., Huseynova S., Mustafaeva S., Mammadova S., Lukichev V.
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| Volume 53, Nº 1 (2024) |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
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Asadov M., Mammadova S., Mustafaeva S., Huseynova S., Lukichev V.
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| Volume 53, Nº 1 (2024) |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
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Ezhovskii Y., Mikhailovskii S.
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| Volume 52, Nº 3 (2023) |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
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Klimov E., Pushkarev S., Klochkov A., Mozhaeva M.
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| Volume 52, Nº 6 (2023) |
MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |
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Belozerov I., Uvarov I.
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| Volume 54, Nº 3 (2025) |
Nanostructured ruthenium etching in three-component Cl2 /O2/Ar plasma |
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Amirov I., Izyumov M., Lopaev D., Rakhimova T., Kropotkin A., Voloshin D., Palov A.
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| Volume 53, Nº 5 (2024) |
Nanophotonic beam-splitter based on quantum dots with förster coupling |
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Tsukanov А., Kateev I.
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| Volume 52, Nº 5 (2023) |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
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Fetisenkova K., Rogozhin A.
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| Volume 53, Nº 5 (2024) |
New concept for the development of high-performance X-ray lithography |
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Chkhalo N.
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| Volume 53, Nº 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
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Chumakov A.
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| Volume 52, Nº 5 (2023) |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
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Efremov A., Smirnov S., Betelin V.
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| Volume 54, Nº 4 (2025) |
Training of a Spiking Neural Network with a Consideration of Memristive Crossbar Array Characteristics |
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Dudkin A., Ryndin E., Andreeva N.
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| Volume 54, Nº 3 (2025) |
Reinforcement learning of spiking neural networks using trace variables for synaptic weights with memristive plasticity |
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Kulagin V., Matsukatova A., Rylkov V., Demin V.
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| Volume 52, Nº 4 (2023) |
Single Event Displacement Effects in a VLSI |
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Chumakov A.
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| Volume 52, Nº 2 (2023) |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
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Isaev A., Permyakova O., Rogozhin A.
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| Volume 54, Nº 3 (2025) |
Features of upsets formation in VLSI under pulsed ionizing radiation |
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Chumakov A.
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| Volume 53, Nº 1 (2024) |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
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Gorlachev E., Mordvintsev V., Kudryavtsev S.
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| Volume 52, Nº 1 (2023) |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
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Ефремов А., Kwon K.
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| Volume 53, Nº 1 (2024) |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
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Miakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
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| Volume 52, Nº 2 (2023) |
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |
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Efremov A., Betelin V., Kwon K.
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| Volume 53, Nº 6 (2024) |
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium |
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Efremov A., Betelin V., Kwon K.
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| Volume 53, Nº 1 (2024) |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
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Golikov O., Zabavichev I., Ivanov A., Obolensky S., Obolenskaya E., Paveliev D., Potekhin A., Puzanov A., Tarasova E., Khazanova S.
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| Volume 54, Nº 4 (2025) |
Perspectives of electron-beam and ion-beam lithography development in Russia |
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Zaitsev S., Irzhak D., Il’in A., Knyazev M., Roshchupkin D., Grachev V., Kurbatov V., Malkov G.
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| Volume 52, Nº 3 (2023) |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
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Polushkin E., Nefed’ev S., Koval’chuk A., Soltanovich O., Shapoval S.
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| Volume 53, Nº 4 (2024) |
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium |
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Murin D., Chesnokov I., Gogulev I., Anokhin A., Moloskin A.
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| Volume 54, Nº 1 (2025) |
AZ nLOF series photoresist films on monocrystalline silicon |
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Brinkevich D., Grinyuk E., Prosolovich V., Zubova O., Kolos V., Brinkevich S., Vabishchevich S.
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| Volume 53, Nº 5 (2024) |
Producing of graphene: deposition and annealing |
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Shustin Е.
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| Volume 52, Nº 3 (2023) |
Precise Tomography of Qudits |
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Bogdanov Y., Bogdanova N., Kuznetsov Y., Koksharov K., Lukichev V.
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