Investigation of double patterning method with the usage of antispacer

E. D. Tikhonova; Тихонова Е. Д.; E. S. Gornev; Горнев Е. С.

doi:10.31857/S0544126925010017

Investigation of double patterning method with the usage of antispacer

Authors: Tikhonova E.D.¹, Gornev E.S.¹
Affiliations:
1. JSC “MERI”
Issue: Vol 54, No 1 (2025)
Pages: 3-8
Section: ЛИТОГРАФИЯ
URL: https://edgccjournal.org/0544-1269/article/view/685014
DOI: https://doi.org/10.31857/S0544126925010017
EDN: https://elibrary.ru/GILVCD
ID: 685014

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Abstract
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About the authors
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Abstract

In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.

Keywords

multipatterning, self-aligned double patterning, antispacer, positive resist with chemical enhancement, EUV

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About the authors

E. D. Tikhonova

JSC “MERI”

Author for correspondence.
Email: etikhonova@niime.ru
Russian Federation, Moscow

E. S. Gornev

JSC “MERI”

Email: egornev@niime.ru
Russian Federation, Moscow

References

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Supplementary files

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2. Fig. 1. Roadmap for the development of the lithographic process technology depending on the critical steps: metallization and gate [3]

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3. Fig. 2. Comparison of the normalized price of the lithography operation per plate depending on the technological standard [4]

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4. Fig. 3. Technological routes of the methods: self-aligned double lithography (SAL) using a spacer (left) and double lithography (DL) using an antispacer (right) [7, 9]