Investigation of double patterning method with the usage of antispacer

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In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.

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作者简介

E. Tikhonova

JSC “MERI”

编辑信件的主要联系方式.
Email: etikhonova@niime.ru
俄罗斯联邦, Moscow

E. Gornev

JSC “MERI”

Email: egornev@niime.ru
俄罗斯联邦, Moscow

参考

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2. Fig. 1. Roadmap for the development of the lithographic process technology depending on the critical steps: metallization and gate [3]

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3. Fig. 2. Comparison of the normalized price of the lithography operation per plate depending on the technological standard [4]

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4. Fig. 3. Technological routes of the methods: self-aligned double lithography (SAL) using a spacer (left) and double lithography (DL) using an antispacer (right) [7, 9]

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5. Fig. 4. Key parameters for improving and optimizing the stages of the DL process with an antispacer

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